韩江朝

学历

博士

学位

博士

出生年月

1988.04

政治面貌

群众

职称

副教授

职务

教师

硕导

否

博导

否

邮箱

hanjiangchao@tyut.edu.cn

工作单位

太原理工大学

研究方向

自旋电子学

学习经历工作经历

【学习经历】

2015/09-2019/08，华中科技大学，凝聚态物理，理学博士。

2012/09-2015/08，燕山大学，凝聚态物理，理学硕士。

【工作经历】

2023/10-至今，太原理工大学，集成电路学院，副教授。

2019/11-2023/09，北京航空航天大学，集成电路科学与工程学院，博士后。

主讲课程

《模拟集成电路设计》

科研项目及成果

1、国家自然科学基金青年科学基金项目，项目编号：12004021，执行年限：2021/01-2023/12，已结题，主持

2、山西省自然科学研究面上项目，项目编号：202403021221033，执行年限：2025/01-2027/12，在研，主持

论文、著作、专利

1. R. Xi, Y. Feng, K. Zhang, W. Yang, H. Lu,   A. Jian, J. Han*, S. Sang, G. Gao,“Large tunneling   magnetoresistance and perpendicular magnetic anisotropy in magnetic tunneling   junction based on spin gapless semiconductor CoFeCrAl”, Appl. Phys. Lett. 127, 112404 (2025).

2. J. Han, C. Lv, W. Yang, X. Wang, G. Wei, W. S. Zhao and X. Y. Lin,“Large tunneling magnetoresistance in van der Waals magnetic   tunnel junctions based on FeCl₂ films with interlayer   antiferromagnetic couplings”, Nanoscale. 15, 2067   (2023).（封面文章）

3. J. Han, Y. Feng and G. Y. Gao*,“A VSi₂P₄/FeCl₂   van der Waals heterostructure: a two-dimensional reconfigurable magnetic   diode”, Phys. Chem. Chem. Phys. 24, 19734, (2022). (热点文章)

4. J. Han, Y. Feng, K. Yao, and G. Y. Gao*,“Spin   transport properties based on spin gapless semiconductor CoFeMnSi”, Appl. Phys. Lett. 111, 132402 (2017).

5. J.   Han and G. Y. Gao*,“Large tunnel magnetoresistance and   temperature-driven spin filtering effect based on the compensated   ferrimagnetic spin gapless semiconductor Ti₂MnAl”, Appl. Phys. Lett. 113, 102402 (2018).

6.   J. Han, X. Chen, W. Yang, C. Lv, X. Wang, G. Wei, X. Y. Lin* and W. S.   Zhao,“Promising spin caloritronics and spin diode effects based on   1T-FeCl₂ nanotube devices”, J. Mater. Chem. C. 10,   607, (2022).

7. J.   Han, D. Zhou, W. Yang, C. Lv, X. Wang, G. Wei, W. Zhao, X. Lin* and S.   Sang,”Resonant tunneling induced large magnetoresistance in vertical   van der Waals magnetic tunneling junctions based on type-II spin-gapless   semiconductor VSi₂P₄”, J. Mater. Chem. C. 12,   696, (2024).

8.   J. Han, J. M. Shen, and G. Y. Gao*,“CrO₂-based   heterostructure and magnetic tunnel junction: perfect spin filtering effect,   spin diode effect and high tunnel magnetoresistance”, RSC Adv. 9, 3550 (2019).

9. J.   Han, X. Wu, Y. Feng, and G. Y. Gao*,“Half-metallic fully   compensated ferrimagnetism and multifunctional spin transport properties of   Mn₃Al”, J. Phys.: Condens. Matter 31, 305501   (2019).

10.   J. Han and G. Y. Gao*, “Theoretical study on   spintronic and spin caloritronic applications for equiatomic quaternary   Heusler alloy NiCoMnAl”, J. Phys. D: Appl. Phys. 52, 505004   (2019).

11.   W. Yang^# , Y. Cao^# , J. Han^# , X.   Lin*, X. Wang, G. Wei, C. Lv, A. Bournel and W. Zhao*,“Spin-filter induced large magnetoresistance in 2D van der Waals   magnetic tunnel junctions”, Nanoscale. 13, 862 (2021).（高被引论文）

12.   W. Yang^# , J. Han^# , Y. Cao, X. Y. Lin* and W.   S. Zhao, “Efficient spin injection in Fe₃GeTe₂/h-BN/graphene   heterostructure”, Acta. Phys. Sin. 68, 208502, (2021).（优秀论文）

学术兼职

无

个人荣誉

无